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  1 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 1. product overview 1.1 general description aw g0020 e , a gain block amplifier mmic, has high linearity , low noise and high efficiency over a wide range of frequency from 30 mhz to 4000 mhz, being suitable for use in both receiver and transmitter of telecommunication system up to 4 ghz . it has an active bias network for stable current over temperature and process variation. the amplifier is available in a n sot 363 package and passes through the stringent dc , rf , and reliability test s. 1.2 features ? 19.7 db gain at 20 00 mhz ? 1 8 .0 dbm p1db at 2000 mhz ? 3 0 .0 dbm oip3 at 2000 mhz ? gain flatness = 3.0 db at 500 ~ 25 00 mhz ? 50 ? input & output matching ? mttf > 100 years ? single supply: + 3.3 v 1.3 app lications ? wide - band application at 500 ~ 300 0 mhz ? if, catv application at 30 ~ 1 2 00 mhz ? smatv, onu application at 50 ~ 30 00 mhz ? narrow band application at 1700 ~ 2000 mhz 1.4 package profile & rohs compliance sot 363, 2.1x2.0 mm 2 , surface mount roh s - compliant awg0020 e data sheet 30 ~ 4000 mhz wide - band gain block amplifier mmic gain & return loss vs. frequency (with bias tees) 0 1000 2000 3000 4000 5000 frequency (mhz) -40 -30 -20 -10 0 10 20 30 40 s-parameter (db) s22 s11 s21
2 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 2. summary on product performances 2.1 typical performance supply voltage = + 3.3 v, t a = +25 ? c, z o = 50 ?? ? parameter typical unit frequency 70 150 300 450 900 2000 2500 2700 mhz gain 22. 7 22. 6 22. 5 22. 4 21.4 19.7 18.8 18.5 db s11 - 14.0 - 15.0 - 15 .0 - 15.0 - 1 5 .0 - 1 4 .0 - 1 0 .0 - 9.0 db s22 - 1 8 .0 - 1 8 .0 - 18.0 - 18.0 - 1 5 .0 - 20 .0 - 20.0 - 1 8 .0 db noise figure 1.5 1.5 1.5 1.5 1.5 2.1 2.7 2.9 db output ip3 1) 30.0 29.5 29.5 30 .0 30.0 3 0 .0 2 5 .0 23.0 dbm output p1db 18.0 18.0 18.0 18.0 1 8 .0 18 .0 17.5 16.5 db m current 35 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1mhz . 2.2 product specification supply voltage = + 3 .3 v, t a = +25 ? c, z o = 50 ?? ? parameter min typ max unit frequency 2000 mhz gain 19.7 db s11 - 1 4 .0 db s22 - 20 .0 db noise figure 2.1 db oip3 3 0 .0 dbm p1db 18 .0 dbm current 35 ma device voltage +3.3 v 2.3 pin configuration pin description simplified outline 1, 2, 4, 5 ground 3 rf_input 6 rf_out & bias 1 2 3 4 5 6
3 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 2.4 absolute maximum ratings parameters max. ratings operation case temperature - 40 to ? 85 ? c storage temperature - 40 to ? 150 ? c device voltage + 4 v operation junction temper ature +150 ? c input rf power ( at 2000 mhz, cw, 50 ? matched) * + 2 5 dbm *please find the max. input power data from http://www.asb.co.kr/pdf/maximum_input_power_analysis.pdf the max. input power, in principle, depends upon the appl ication frequency and matching circuit. 2.5 thermal resistance symbol description typ unit r th thermal resistance from junction to lead 180 ? c/w 2.6 esd classification & moisture sensitivity level esd clas sification hbm class 1b voltage level: 750 v mm class a voltage level: 100 v contact discharge voltage level: 1.0 kv (input), 1.5 kv (output) air contact discharge (10 cm) voltage level: > 20 kv caution: gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices. moisture sensitivity level m sl 3 at 260 ? c reflow (intentionally blanked)
4 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e pcb infor mation material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 363 - a2 3. application : 5 00 ~ 3 0 00 mhz 3.1 application circuit & evaluation board bill o f material symbol value size description manufacturer awg0020 e - - mmic amplifier asb c1, c2, c3 100 pf 0603 dc block ing capacitor murata c 4 1 ? f 0603 decoupling capacitor murata l1 33 nh 0603 rf choke inductor murata c4 c1 c2 l1 c3 AWG0020E rf in rf out vdevice = +3.3 v
5 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 3.2 performance table supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 500 900 2000 2500 2700 3000 mhz gain 21.8 21.4 19.7 18.8 18.5 18.3 db s11 - 1 3 .0 - 1 5 .0 - 1 4 .0 - 1 0 .0 - 9.0 - 7.0 db s22 - 1 2 .0 - 1 5 .0 - 20 .0 - 20.0 - 1 8 .0 - 1 2 .0 db noise figure 1.5 1.5 2.1 2.7 2.9 3.2 db output ip3 1) 30.0 30.0 3 0 .0 2 5 .0 23.0 21 .0 dbm output p1db 18 .0 1 8 .0 18 .0 17.5 16.5 15.0 dbm current 35 ma device voltage +3.3 v 1 ) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1mhz . 3.3 plot of s - parameter & stability factor 0 1000 2000 3000 4000 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameters (db) 0 1 2 3 4 5 6 7 stability factor, k s21 s12 s11 s22 k
6 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 3.4 plot s of noise figure and performances with temperature -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 5 10 15 20 25 gain (db) frequency = 2000 mhz -60 -40 -20 0 20 40 60 80 100 temperature (c) 10 15 20 25 30 35 40 45 50 current (ma) -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 1 2 3 4 5 nf (db) frequency = 2000 mhz
7 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 output tone power (dbm) 0 10 20 30 40 50 output ip3 (dbm) -40 c +25 c +85 c frequency = 2000 mhz -60 -40 -20 0 20 40 60 80 100 temperature (c) 12 14 16 18 20 p1db (dbm) frequency = 2000 mhz
8 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 4. application : 30 ~ 1200 mhz ( if, catv ) 4.1 application circuit & evaluation board bill of material symbol value size description manufacturer awg0020 e - - mmic amplifier asb c1, c2 1 ? f 0603 dc block ing capacitor murata c3 - - not used c4 10 ? f 0805 decoupling capac itor murata l1 1 ? h 12 06 rf choke inductor murata pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 363 - a2 c4 c1 c2 l1 c3 AWG0020E rf in rf out vdevice = +3.3 v
9 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 4.2 performance table supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 30 70 150 300 450 860 1000 1200 mhz gain 22.8 22. 7 22. 6 22. 5 22. 4 21. 8 21. 6 21.3 db s11 - 11.0 - 14.0 - 15.0 - 15.0 - 15.0 - 1 5 0 - 1 4 .0 - 1 4 . 0 db s22 - 1 8 .0 - 1 8 .0 - 1 8 .0 - 18.0 - 18.0 - 20.0 - 20.0 - 20.0 db noise figure 1.8 1.5 1.5 1.5 1.5 1.5 1.5 1.5 db output ip3 1) 29.5 30.0 30.0 30.0 30 .0 30.0 30.0 30.0 dbm output p1db 18.0 18.0 18.0 18.0 18.0 18.0 18.0 18.0 dbm current 35 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1mhz . 4.3 plot of s - parameter & stability factor 0 300 600 900 1200 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameter (db) 0 1 2 3 4 5 6 7 stability factor k s21 s11 s22 s12 k
10 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 5. application : 50 ~ 30 00 mhz ( smatv, onu ) 5.1 application circuit & evaluation board b ill of material symbol value size description manufacturer awg0020 e - - mmic amplifier asb c1, c2 1 ? f 0603 dc block ing capacitor murata c3 - - not used c4 10 ? f 0805 decoupling capacitor murata l1 1 ? h 12 06 rf choke inductor murata pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 363 - a2 c4 c1 c2 l1 c3 AWG0020E rf in rf out vdevice = +3.3 v
11 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 5.2 performance tabl e supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 50 500 1000 2000 2500 3000 mhz gain 22. 7 22. 3 21. 6 1 9.7 1 8.7 17.1 db s11 - 13.0 - 15.0 - 1 4 .0 - 11.0 - 9.0 - 6 .0 db s22 - 1 8 .0 - 18.0 - 20.0 - 18.0 - 14.0 - 10.0 db noise figure 1 .7 1.6 1.5 2.0 2.5 3.0 db output ip3 1) 30.0 30.0 30.0 29.0 25. 0 22 .0 dbm output p1db 18.0 18.0 18.0 18.0 18.0 16.0 dbm current 35 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1mhz . 5.3 plot of s - parameter & stability factor 0 500 1000 1500 2000 2500 3000 3500 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameter (db) 0 1 2 3 4 5 6 7 stability factor k s21 s11 s22 s12 k
12 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 6. application : 1700 ~ 2 0 00 mhz 6.1 application circuit & evaluation board bill of material symbol value size description manufacturer awg0020 e - - mmic amplifier asb c1, c2 100 pf 0603 dc block ing capacitor murata c3 100 pf 0603 decoupling capacitor murata c4 1 ? f 0805 decoupling capacitor murata l1 12 n h 0603 rf choke inductor murata p cb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 363 - a2 c4 c1 c2 l1 c3 AWG0020E rf in rf out vdevice = +3.3 v
13 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 6.2 performance table supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 1700 1800 1900 2000 mhz gain 20 .3 20.2 20.1 20.0 db s11 - 1 8.0 - 18.0 - 18.0 - 1 7 .0 db s22 - 12.0 - 13.0 - 14.0 - 15.0 db noise figure 1 .9 2 .0 2 .0 2 .1 db output ip3 1) 3 1.0 3 1.0 3 1.0 3 0.0 dbm output p1db 1 8.0 1 8.0 1 8.0 1 8.0 dbm current 35 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1mhz . 6.3 plot of s - parameter & stability factor 0 1000 2000 3000 4000 frequency (mhz) (mhz) -40 -30 -20 -10 0 10 20 30 s-parameter (db) 0 1 2 3 4 5 6 7 stability factor k s21 s11 s22 s12 k
14 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 7. p ackage outline (sot363, 2.1x2.0x1.0 mm) 8. surface mount recommendation (in mm) symbols dimensions (in mm) min nom max a 0.900 1.000 1.10 a1 0.025 0.062 0.10 a2 0.875 0.937 1.00 b 0.200 0.300 0.40 c 0.100 0.125 0.15 d 1.900 2.000 2.10 f 1.150 1.250 1.35 e1 2.000 2.100 2.20 e 0.65bsc e 1 1.30bsc l 0.425ref n ote 1. the number and size of ground via holes in a circuit board are critical for thermal and rf grounding considerations. 2. r ecommend is that the ground via holes b e placed on the bottom of the ground lead s and exposed pad of the device for better rf and thermal performance, as shown in the drawing at the left side. a23 1.48 1.33 0.30 0.42 0.50 1.23 0.30 0.25 1.75 0.40
15 / 15 asb inc. ? sales@asb .co.kr j anuary 201 7 awg002 0e 9. recommended soldering reflow profile (end of datasheet) copyright ? 2014 - 2017 asb inc. all rights reserved. datasheet subject to change without notice. asb assumes no responsibility for any errors which may appear in this datasheet. no part of the datas heet may be copied or reproduced in any form or by any means without the prior written consent of asb. 20~40 sec 260 ? c 200 ? c 150 ? c 60~180 sec ramp - up (3 ? c/sec) ramp - down (6 ? c/sec)


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